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本中心與台積電合作研發二維材料微影製程，共同發表成果論文於半導體領域的國際頂尖會議2023VLSI，並獲選為highlight paper
Scaled Contact Length with Low Contact Resistance in Monolayer 2D Channel Transistors
W.-C. Wu*, **, T. Y. T. Hung*, D. M. Sathaiya*, D. Fan***, G. Arutchelvan*, C.-F. Hsu*, S.-K. Su*, A. S. Chou*, E. Chen*, W. Li***, Z. Yu***, H. Qiu***, Y.-M. Yang****, K.-I. Lin****, Y.-Y. Shen**, W.-H. Chang**, S. L. Liew*, V. Hou*, J. Cai*, C.-C. Wu*, J. Wu*, H.-S. Philip Wong*, X. Wang***, C.-H. Chien**, C.-C. Cheng* and I. P. Radu*,
*TSMC and **National Yang Ming Chiao Tung Univ., Taiwan, ***Nanjing Univ., China and ****National Cheng Kung Univ., Taiwan