Terry Y.T. Hung¹, Meng-Zhan Li^1,4, Sheng-Kai Su¹, Edward Chen¹, Sui An Chou¹, Walker Yun¹, San Lin Liew², Ying-Mei Yang³, Kuang-I Lin³, Vincent Hou², T.Y. Lee¹, Han Wang¹, Albert Cheng¹, Minn-Tsong Lin^4,5,6, H.-S. Philip Wong⁷, and Iuliana P. Radu¹, "pMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping", 2022 International Electron Devices Meeting (IEDM).

1.Corporate Research,  2.Quality & Reliability, TSMC.  3.CFC, NCKU.  4.Dept. of Phys., NTU.  5.IAMS, Academia Sinica.  6.RCAS, Academia Sinica.  7.Corporate Research, TSMC, USA.